MT48H8M16LFB4-10 Micron Technology Inc, MT48H8M16LFB4-10 Datasheet - Page 36

• Manufacturer Part Number: MT48H8M16LFB4-10
• Description: IC SDRAM 128MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with
11. Does not affect the state of the bank and acts as a NOP to that bank.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid
9. Deep Power-Down is power-saving feature of this Mobile SDRAM device. This command is
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
state for precharging.
BURST TERMINATE when CKE is HIGH and DEEP POWER-DOWN when CKE is LOW.
auto precharge enabled and READs or WRITEs with auto precharge disabled.
t
RP is met. Once
36
t
RP is met, all banks will be in the idle state.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16 Mobile SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Power-Down