MT47H16M16BG-3E:B Micron Technology Inc, MT47H16M16BG-3E:B Datasheet - Page 100
![IC DDR2 SDRAM 256MBIT 3NS 84FBGA](/photos/7/23/72318/mfg557-84-fbga_sml.jpg)
MT47H16M16BG-3E:B
Manufacturer Part Number
MT47H16M16BG-3E:B
Description
IC DDR2 SDRAM 256MBIT 3NS 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H16M16BG-3E:B
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (16Mx16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H16M16BG-3E:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
- Current page: 100 of 128
- Download datasheet (10Mb)
Figure 56: Write Burst
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
100
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
256Mb: x4, x8, x16 DDR2 SDRAM
Transitioning Data
T2n
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
©2003 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE
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