MT46V64M8BN-75:D Micron Technology Inc, MT46V64M8BN-75:D Datasheet - Page 83

• Manufacturer Part Number: MT46V64M8BN-75:D
• Description: IC DDR SDRAM 512MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M8BN-75:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 145mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 48:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
BA0, BA1
Address
DQS
DQ 5
CK#
CKE
A10
DM
CK
t
t
IS
IS
NOP 1
Bank WRITE – Without Auto Precharge
T0
t
t
IH
IH
Notes:
t
t
Bank x
IS
IS
Row
Row
ACT
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 85 for detailed DQ timing.
t
t
IH
IH
t
times.
CK
t
t
RCD
RAS
NOP 1
T2
t
CH
t
CL
WRITE 2
t
Bank x
Col n
IS
3
T3
t
t
DQSS (NOM)
IH
t
WPRES
t DS
83
t
WPRE
NOP 1
T4
DI
b
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 1
T5
512Mb: x4, x8, x16 DDR SDRAM
t
DQSH
T5n
t
WPST
NOP 1
T6
Transitioning Data
©2000 Micron Technology, Inc. All rights reserved.
t
NOP 1
WR
T7
Operations
One bank
All banks
Don’t Care
Bank x 4
T8
PRE
t
RP