MT46V32M16BN-6:C TR Micron Technology Inc, MT46V32M16BN-6:C TR Datasheet - Page 34
![IC DDR SDRAM 512MBIT 6NS 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT46V32M16BN-6:C TR
Manufacturer Part Number
MT46V32M16BN-6:C TR
Description
IC DDR SDRAM 512MBIT 6NS 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V32M16BN-6C_TR.pdf
(91 pages)
Specifications of MT46V32M16BN-6:C TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-FBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 23:
Table 24:
Table 25:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
Speed
Speed
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 35;
0°C ≤ T
A
A
A
≤ +70°C; V
≤ +70°C; V
≤ +70°C; V
Slew Rate
Slew Rate
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
DD
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
DD
DD
DD
= +2.5V ±0.2V
= +2.5V ±0.2V
= +2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
34
DS
IS
Symbol
tWPST
t
t
t
XSNR
XSRD
tWR
WTR
n/a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
1
t
QH -
0.50
0.55
0.60
t
t
DH
IH
-75
1
1
1
t
DQSQ
Max
0.6
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
tCK
t
t
ns
CK
ns
CK
ns
Units
Units
ns
ns
ns
ns
ns
ns
Notes
20
26