MT45W4MW16BFB-856 WT F Micron Technology Inc, MT45W4MW16BFB-856 WT F Datasheet - Page 31
![IC PSRAM 64MBIT 85NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BFB-856 WT F
Manufacturer Part Number
MT45W4MW16BFB-856 WT F
Description
IC PSRAM 64MBIT 85NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-856 WT F
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 23:
Table 11:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Description
Deep Power-Down
70
60
50
40
30
20
10
0
-30
Deep Power-Down Specifications
Typical Refresh Current vs. Temperature (I
-20
-10
Note:
0
Typical I
10
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
V
IN
SB
Temperature (°C)
= V
20
currents for each PAR setting with the appropriate TCR selected.
Conditions
CC
Q or 0V; +25°C
30
40
31
50
TCR
60
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
70
I
ZZ
80
Electrical Characteristics
90
©2003 Micron Technology, Inc. All rights reserved.
Typ
10
PAR = Full Array
PAR = 1/2 of Array
PAR = 1/4 of Array
PAR = 1/8 of Array
PAR = None of Array
Units
µA
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