MT28F800B5WG-8 B Micron Technology Inc, MT28F800B5WG-8 B Datasheet - Page 26
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MT28F800B5WG-8 B
Manufacturer Part Number
MT28F800B5WG-8 B
Description
IC FLASH 8MBIT 80NS 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT28F008B5VG-8_B.pdf
(30 pages)
Specifications of MT28F800B5WG-8 B
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
80ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
TIMING PARAMETERS
Commercial Temperature (0ºC ≤ T
Extended Temperature (-40ºC ≤ T
Notes: 1. Address inputs are “Don’t Care” but must be held stable.
09005aef8075d1ec
MT28F800B5_4.fm - Rev. 4, Pub. 2/2004
SYMBOL
t
t
t
t
t
t
t
t
t
t
WC
WPH
CP
AS
AH
DS
DH
WS
WH
VPS1
4
A0–A18/(A19)
DQ0–DQ15
DQ0–DQ7/
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit.
3. Either RP# at V
WP#
RP#
WE#
OE#
CE#
V
PP
2
3
3
V
V
V
PPH1
IL
V
V
V
V
V
V
V
V
V
V
V
V
V
V
HH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
ERASE SETUP input
t WS
t RS
WRITE SETUP or
HH
t CP
t DS
MIN
200
80
30
50
50
50
t AS
0
0
0
0
or WP# HIGH unlocks the boot block.
Note 1
-8/-8 ET
CMD
in
A
A
≤ +85ºC)
t AH
≤ +70ºC)
MAX
CE#-CONTROLLED WRITE/ERASE
t WH
t CPH
t WC
t DH
WRITE or ERASE (block)
t DS
WRITE data or ERASE
address asserted, and
CONFIRM issued
t VPS1
t AS
t RHS
WRITE/ERASE CYCLE
Data-in
CMD/
UNITS
A
IN
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
[Unlock boot block]
[Unlock boot block]
SMART 5 BOOT BLOCK FLASH MEMORY
t AH
[5V V
t DH
t WED1/2/3/4
26
t WB
PP
]
SYMBOL
t
t
t
t
t
t
t
t
t
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(SR7=0)
Status
executed, status register
checked for completion
WRITE or ERASE
(SR7=1)
Status
t VPH
t RHH
1,000
MIN
100
100
100
500
200
4.5
0
0
-8/-8 ET
Command for next
operation issued
MAX
DON’T CARE
CMD
©2002 Micron Technology Inc.
in
8Mb
UNITS
ms
ms
ms
ns
ns
µs
ns
ns
ns