MT28F320J3RP-11 MET Micron Technology Inc, MT28F320J3RP-11 MET Datasheet - Page 46
![IC FLASH 32MBIT 110NS 56TSOP](/photos/7/30/73003/mfg557-56-tsop_sml.jpg)
MT28F320J3RP-11 MET
Manufacturer Part Number
MT28F320J3RP-11 MET
Description
IC FLASH 32MBIT 110NS 56TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT28F128J3FS-12_ET_TR.pdf
(55 pages)
Specifications of MT28F320J3RP-11 MET
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
110ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 27: AC Characteristics–Read-Only Operations
Notes: 1, 2, 4; extended temperature (-40ºC ≤ T
NOTE:
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
PARAMETER
CEx HIGH to CEx LOW
Page Address Access Time
1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first
2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3. OE# may be delayed up to
4. See Figure 17 on page 44, Transient Input/Output Reference Waveform, for V
5. When reading the Flash array, a faster
6. Sampled, not 100 percent tested.
edge of CE0, CE1, or CE2 that disables the device (see Table 2).
impact on
page 45, Transient Equivalent Testing Load Circuit, for testing characteristics.
or DEVICE IDENTIFIER READs.
t
ACE .
t
ACE–AOE after the first edge of CEx that enables the device (see Table 2) without
t
AOE applies. Non-array READs refer to status register READs, QUERY READs,
A
≤ +85ºC)
SYMBOL DENSITY
t
t
CWH
46
APA
Micron Technology, Inc., reserves the right to change products or specifications without notice.
All
All
V
CC
V
CC
MIN
Q = 2.7V – 3.6V, and Figure 18 on
CC
0
Q = 2.7V–3.6V
128Mb, 64Mb, 32Mb
= 2.7V–3.6V
Q-FLASH MEMORY
MAX
25
UNITS
ns
ns
©2000 Micron Technology. Inc.
NOTES
6