MT28F008B3VG-9 TET TR Micron Technology Inc, MT28F008B3VG-9 TET TR Datasheet - Page 30
![IC FLASH 8MBIT 90NS 40TSOP](/photos/7/30/73004/mfg557-40-tsop_sml.jpg)
MT28F008B3VG-9 TET TR
Manufacturer Part Number
MT28F008B3VG-9 TET TR
Description
IC FLASH 8MBIT 90NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT28F008B3VG-9_B.pdf
(30 pages)
Specifications of MT28F008B3VG-9 TET TR
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8)
Speed
90ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Revision History
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
Rev. E, Pub.6/04. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6/04
• Update to I
• 40-pin TSOP and 48-pin TSOP package drawings have been updated
Rev. D, Pub.3/04 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/04
• Added lead-free packaging options
Rev. 3, Pub. 10/01 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10/01
• Updated input capacitance spec
• Changed access time to 90ns
Rev. 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/01
• Changed to 0.18µm process
• 12V V
• 10V
• V
•
•
• AC test output load CL changed to 50pF
• Typical main BLOCK ERASE time changed to 1.5s from 1s
• Typical main BLOCK WRITE time (byte mode) changed to 1s from 0.5s
• Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s
• MT28F800B3 only available in WG and SG packages
• MT28F008B3 only available in VG package
• Added 80ns access time for commercial and extended temperature ranges
t
t
RWH changed to 1µs from 800ns
AH changed to 10ns from 0ns
OH
≤
≤
PP
V
V
HH
CC
no longer supported
- 0.2V
≤
CC
12V
6 value
SMART 3 BOOT BLOCK FLASH MEMORY
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
8Mb