MT46V16M16BG-6:F TR Micron Technology Inc, MT46V16M16BG-6:F TR Datasheet - Page 85
![IC DDR SDRAM 256MBIT 6NS 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT46V16M16BG-6:F TR
Manufacturer Part Number
MT46V16M16BG-6:F TR
Description
IC DDR SDRAM 256MBIT 6NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16BG-6:F TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1182-2
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Figure 48:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
BA0, BA1
Address
DQS
DQ 5
CK#
CKE
A10
DM
CK
t
t
IS
IS
NOP 1
Bank WRITE – Without Auto Precharge
T0
t
t
IH
IH
Notes:
t
t
Bank x
IS
IS
Row
Row
ACT
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 85 for detailed DQ timing.
t
t
IH
IH
t
times.
CK
t
t
RCD
RAS
NOP 1
T2
t
CH
t
CL
WRITE 2
t
Bank x
Col n
IS
3
T3
t
t
DQSS (NOM)
IH
t
WPRES
t DS
83
t
WPRE
NOP 1
T4
DI
b
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 1
T5
t
DQSH
256Mb: x4, x8, x16 DDR SDRAM
T5n
t
WPST
NOP 1
T6
Transitioning Data
©2003 Micron Technology, Inc. All rights reserved.
t
NOP 1
WR
T7
Operations
One bank
All banks
Don’t Care
Bank x 4
T8
PRE
t
RP
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