MT46V64M8P-6T L:F TR Micron Technology Inc, MT46V64M8P-6T L:F TR Datasheet - Page 90
![IC DDR SDRAM 512MBIT 6NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V64M8P-6T L:F TR
Manufacturer Part Number
MT46V64M8P-6T L:F TR
Description
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V64M8P-6T L:F TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (64M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 90 of 91
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Power-down (CKE Not Active)
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Unlike SDR SDRAMs, DDR SDRAMs require CKE to be active at all times an access is in
progress, from the issuing of a READ or WRITE command, until completion of the
access. Thus a clock suspend is not supported. For READs, an access completion is
defined when the read postamble is satisfied; for WRITEs, when the write recovery time
(
Power-down, as shown in Figure 55 on page 91, is entered when CKE is registered LOW
and all criteria in Table 33 on page 47 are met. If power-down occurs when all banks are
idle, this mode is referred to as precharge power-down; if power-down occurs when a
row is active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CK, CK#, and CKE. For
maximum power savings, the DLL is frozen during precharge power-down mode. Exiting
power-down requires the device to be at the same voltage and frequency as when it
entered power-down. However, power-down duration is limited by the refresh require-
ments of the device (
While in power-down, CKE LOW and a stable clock signal must be maintained at the
inputs of the DDR SDRAM, while all other input signals are “Don’t Care.” The power-
down state is synchronously exited when CKE is registered HIGH (in conjunction with a
NOP or DESELECT command). A valid executable command may be applied one clock
cycle later.
t
WR) is satisfied.
t
REFC or
90
t
REFC
AT
).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
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