MT48LC16M8A2FB-75 IT:G TR Micron Technology Inc, MT48LC16M8A2FB-75 IT:G TR Datasheet - Page 40

• Manufacturer Part Number: MT48LC16M8A2FB-75 IT:G TR
• Description: IC SDRAM 128MBIT 133MHZ 60FBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M8A2FB-75 IT:G TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1067-2

Figure 32:
Figure 33:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
Internal
States
Internal
States
WRITE With Auto Precharge Interrupted by a READ
WRITE With Auto Precharge Interrupted by a WRITE
Notes:
Notes:
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
CLK
CLK
DQ
DQ
• Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will
1. DQM is LOW.
1. DQM is LOW.
interrupt a WRITE on bank n when registered. The precharge to bank n will begin
after
valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank
m (Figure 33).
Page Active
Page Active
T0
T0
NOP
NOP
t
WR is met, where
WRITE - AP
WRITE - AP
BANK n,
BANK n,
Page Active
Page Active
BANK n
BANK n
COL a
COL a
T1
D
T1
D
a
a
IN
IN
WRITE with Burst of 4
WRITE with Burst of 4
a + 1
a + 1
T2
T2
D
D
NOP
NOP
IN
IN
t
WR begins when the WRITE to bank m is registered. The last
40
BANK m,
READ - AP
T3
COL d
T3
a + 2
BANK m
D
NOP
IN
Interrupt Burst, Write-Back
t
READ with Burst of 4
WR - BANK n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
TRANSITIONING DATA
TRANSITIONING DATA
COL d
BANK m
T4
CL = 3 (BANK m)
T4
D
NOP
d
Interrupt Burst, Write-Back Precharge
t
IN
WR - BANK n
WRITE with Burst of 4
T5
T5
d + 1
NOP
NOP
D
IN
Precharge
t
128Mb: x4, x8, x16 SDRAM
RP - BANK n
T6
T6
D
NOP
d + 2
NOP
D
OUT
t
d
RP - BANK n
IN
©1999 Micron Technology, Inc. All rights reserved.
DON’T CARE
DON’T CARE
T7
T7
d + 3
D
d + 1
NOP
NOP
D
t
t
OUT
RP - BANK m
WR - BANK m
IN
Write-Bac k
Operations