MT46V32M8TG-6T IT:G TR Micron Technology Inc, MT46V32M8TG-6T IT:G TR Datasheet - Page 30

IC DDR SDRAM 256MBIT 6NS 66TSOP

MT46V32M8TG-6T IT:G TR

Manufacturer Part Number
MT46V32M8TG-6T IT:G TR
Description
IC DDR SDRAM 256MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46V32M8TG-6T IT:G TR

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (32M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1028-2
Table 20:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
AC Characteristics
Parameter
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-6T) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V
28
Symbol
t
WPRES
t
t
t
t
WPST
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
Min
256Mb: x4, x8, x16 DDR SDRAM
200
0.4
15
75
0
1
t
-6T (TSOP)
QH -
t
DQSQ
Max
0.6
©2003 Micron Technology, Inc. All rights reserved.
Units
t
t
t
ns
CK
ns
CK
ns
CK
ns
Notes
21, 22
20
26

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