AT45DB041D-SSU Atmel, AT45DB041D-SSU Datasheet - Page 10

IC FLASH 4MBIT 66MHZ 8SOIC

AT45DB041D-SSU

Manufacturer Part Number
AT45DB041D-SSU
Description
IC FLASH 4MBIT 66MHZ 8SOIC
Manufacturer
Atmel
Datasheets

Specifications of AT45DB041D-SSU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
4M (2048 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Density
4Mb
Access Time (max)
6ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
15mA
Mounting
Surface Mount
Pin Count
8
Architecture
Sectored
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
64 KB x 8
Memory Configuration
2048 Pages X 256 Bytes
Clock Frequency
50MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB041D-SSU
Manufacturer:
ATMEL
Quantity:
12 000
Part Number:
AT45DB041D-SSU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT45DB041D-SSU-2.5
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Table 7-2.
7.7
10
PA10/
A18
0
0
0
0
1
1
1
1
Chip Erase
AT45DB041D
PA9/
A17
0
0
0
1
0
0
1
1
Sector Erase Addressing
PA8/
A16
(1)
0
0
1
0
0
1
0
1
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-
serted to start the erase process. The erase operation is internally self-timed and should take
place in a time of t
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
The WP pin can be asserted while the device is erasing, but protection will not be activated until
the internal erase cycle completes.
Figure 7-1.
Note:
Command
Chip Erase
PA7/
A15
X
X
X
X
X
X
0
0
1. Refer to the errata regarding Chip Erase on
PA6/
A14
X
X
X
X
X
X
0
0
Chip Erase
CS
SI
CE
. During this time, the Status Register will indicate that the device is busy.
PA5/
A13
X
X
X
X
X
X
0
0
Each transition
represents 8 bits
PA4/
A12
Opcode
Byte 1
X
X
X
X
X
X
0
0
PA3/
A11
X
X
X
X
X
X
0
1
Byte 1
C7H
Opcode
Byte 2
PA2/
A10
X
X
X
X
X
X
X
X
page
Opcode
Byte 3
54.
Byte 2
94H
PA1/
A9
X
X
X
X
X
X
X
X
Opcode
Byte 4
PA0/
A8
X
X
X
X
X
X
X
X
Byte 3
80H
3595P–DFLASH–09/09
Sector
0a
0b
1
2
4
5
6
7
Byte 4
9AH

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