AT45DB081D-SU Atmel, AT45DB081D-SU Datasheet - Page 9

• Manufacturer Part Number: AT45DB081D-SU
• Description: IC FLASH 8MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB081D-SU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 8M (4096 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Architecture: Sectored
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 64 KB x 16
• Memory Configuration: 4096 Pages X 264 Bytes
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.5V To 3.6V, 2.7V To 3.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.4
7.5
Table 7-1.
3596F–DFLASH–8/07
PA11/
A19
0
0
0
0
1
1
1
1
•
•
•
Page Erase
Block Erase
PA10/
A18
0
0
0
0
1
1
1
1
•
•
•
Block Erase Addressing
PA9/
A17
0
0
0
0
1
1
1
1
•
•
•
The Page Erase command can be used to individually erase any page in the main memory array
allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a
page erase in the DataFlash standard page size (264 bytes), an opcode of 81H must be loaded
into the device, followed by three address bytes comprised of 3 don’t care bits, 12 page address
bits (PA11 - PA0) that specify the page in the main memory to be erased and 9 don’t care bits.
To perform a page erase in the binary page size (256 bytes), the opcode 81H must be loaded
into the device, followed by three address bytes consist of 4 don’t care bits, 12 page address bits
(A19 - A8) that specify the page in the main memory to be erased and 8 don’t care bits. When a
low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased
state is a logical 1). The erase operation is internally self-timed and should take place in a maxi-
mum time of t
A block of eight pages can be erased at one time. This command is useful when large amounts
of data has to be written into the device. This will avoid using multiple Page Erase Commands.
To perform a block erase for the DataFlash standard page size (264 bytes), an opcode of 50H
must be loaded into the device, followed by three address bytes comprised of 3 don’t care bits,
9 page address bits (PA11 -PA3) and 12 don’t care bits. The 9 page address bits are used to
specify which block of eight pages is to be erased. To perform a block erase for the binary page
size (256 bytes), the opcode 50H must be loaded into the device, followed by three address
bytes consisting of 4 don’t care bits, 9 page address bits (A19 - A11) and 11 don’t care bits. The
9 page address bits are used to specify which block of eight pages is to be erased. When a low-
to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The
erase operation is internally self-timed and should take place in a maximum time of t
this time, the status register will indicate that the part is busy.
PA8/
A16
0
0
0
0
1
1
1
1
•
•
•
PA7/
A15
0
0
0
0
1
1
1
1
PE
•
•
•
. During this time, the status register will indicate that the part is busy.
PA6/
A14
1
1
1
1
0
0
0
0
•
•
•
PA5/
A13
0
0
0
0
1
1
1
1
•
•
•
PA4/
A12
0
0
1
1
0
0
1
1
•
•
•
PA3/
A11
0
1
0
1
0
1
0
1
•
•
•
PA2/
A10
X
X
X
X
X
X
X
X
•
•
•
PA1/
A9
X
X
X
X
X
X
X
X
•
•
•
AT45DB081D
PA0/
A8
X
X
X
X
X
X
X
X
•
•
•
BE
Block
508
509
510
511
. During
0
1
2
3
•
•
•
9