AT49BV6416T-70TI Atmel, AT49BV6416T-70TI Datasheet

AT49BV6416T-70TI

Manufacturer Part Number

AT49BV6416T-70TI

Description

IC FLASH 64MBIT 70NS 48TSOP

Manufacturer

Atmel

Datasheets

1.AT49BV6416-70TI.pdf (30 pages)

2.AT49BV6416T-70TI.pdf (30 pages)

Specifications of AT49BV6416T-70TI

Format - Memory

FLASH

Memory Type

FLASH

Memory Size

64M (4M x 16)

Speed

70ns

Interface

Parallel

Voltage - Supply

2.7 V ~ 3.6 V

Operating Temperature

-40°C ~ 85°C

Package / Case

48-TSOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AT49BV6416T-70TI

Manufacturer:

ATMEL

Quantity:

1 831

Company:

Meier Automation Equipment Co., Limited

Part Number:

AT49BV6416T-70TI

Manufacturer:

ATMEL/爱特梅尔

Quantity:

20 000

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Features

•

1. Description

The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided

into multiple sectors and planes for erase operations. The device can be read or

reprogrammed off a single 2.7V power supply, making it ideally suited for in-system

programming. The output voltage can be separately controlled down to 2.2V through

the VCCQ supply pin. The device can operate in the asynchronous or page read

mode.

The AT49BV6416(T) is divided into four memory planes. A read operation can occur

in any of the three planes which is not being programmed or erased. This concurrent

operation allows improved system performance by not requiring the system to wait for

a program or erase operation to complete before a read is performed. To further

increase the flexibility of the device, it contains an Erase Suspend and Program Sus-

pend feature. This feature will put the erase or program on hold for any amount of time

and let the user read data from or program data to any of the remaining sectors. There

is no reason to suspend the erase or program operation if the data to be read is in

another memory plane. The end of program or erase is detected by Data Polling or

toggle bit.

64-megabit (4M x 16) Flash Memory

2.7V - 3.6V Read/Write

High Performance

Sector Erase Architecture

Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms

Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being

Programmed/Erased

Suspend/Resume Feature for Erase and Program

Low-power Operation

2.2V I/O Option Reduces Overall System Power

Data Polling and Toggle Bit for End of Program Detection

VPP Pin for Write Protection and Accelerated Program Operations

RESET Input for Device Initialization

TSOP Package

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Common Flash Interface (CFI)

Green (Pb/Halide-free) Packaging Option

– Asynchronous Access Time – 70 ns

– Page Mode Read Time – 20 ns

– Eight 4K Word Sectors with Individual Write Lockout

– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout

– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors

– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors

– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors

– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors

– Supports Reading and Programming Data from Any Sector by Suspending Erase

– Supports Reading Any Word by Suspending Programming of Any Other Word

– 30 mA Active

– 35 µA Standby

of a Different Sector

64-megabit

(4M x 16)

Page Mode

2.7-volt Flash

Memory

AT49BV6416

AT49BV6416T

Not Recommended

for New Design. Use

AT49BV642D(T).

3451D–FLASH–04/06

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