AT28C010-20SI Atmel, AT28C010-20SI Datasheet - Page 9

IC EEPROM 1MBIT 200NS 32SOIC

AT28C010-20SI

Manufacturer Part Number
AT28C010-20SI
Description
IC EEPROM 1MBIT 200NS 32SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT28C010-20SI

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOIC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
t
t
V
16. Page Mode Characteristics
17. Page Mode Write Waveforms
Notes:
18. Chip Erase Waveforms
0353G–PEEPR–10/06
S
W
Symbol
t
t
t
t
t
t
t
t
H
WC
AS
AH
DS
DH
WP
BLC
WPH
= 5 µsec (min.)
= t
= 12.0V ± 0.5V
H
= 10 msec (min.)
1. A7 through A16 must specify the same page address during each high to low transition of WE (or CE).
2. OE must be high only when WE and CE are both low.
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
(1)(2)
Min
100
50
50
50
0
0
Max
150
10
AT28C010
Units
ms
ns
ns
ns
ns
ns
µs
ns
9

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