AT27C080-12RI Atmel, AT27C080-12RI Datasheet - Page 9

IC OTP 8MBIT 120NS 32SOIC

AT27C080-12RI

Manufacturer Part Number
AT27C080-12RI
Description
IC OTP 8MBIT 120NS 32SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT27C080-12RI

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
8M (1M x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOIC (11.17mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT27C08012RI
18. Rapid Programming Algorithm
0360L–EPROM–12/07
A 50 µs CE pulse width is used to program. The address is set to the first location. V
raised to 6.5V and OE/V
50 µs CE pulse without verification. Then a verification reprogramming loop is executed for
each address. In the event a byte fails to pass verification, up to 10 successive 50 µs pulses
are applied with a verification after each pulse. If the byte fails to verify after 10 pulses have
been applied, the part is considered failed. After the byte verifies properly, the next address is
selected until all have been checked. OE/V
are read again and compared with the original data to determine if the device passes or fails.
PP
is raised to 13.0V. Each address is first programmed with one
PP
is then lowered to V
IL
and V
CC
AT27C080
to 5.0V. All bytes
CC
is
9

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