AT45DB161B-TC Atmel, AT45DB161B-TC Datasheet - Page 3

IC FLASH 16MBIT 20MHZ 28TSOP

AT45DB161B-TC

Manufacturer Part Number
AT45DB161B-TC
Description
IC FLASH 16MBIT 20MHZ 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT45DB161B-TC

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
16M (4096 pages x 528 bytes)
Speed
20MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB161B-TC
Manufacturer:
TSOP
Quantity:
4 800
Part Number:
AT45DB161B-TC
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Memory Architecture Diagram
Device Operation
Read Commands
2224I–DFLSH–10/04
SECTOR ARCHITECTURE
130,944 bytes (124K + 3,968)
135,168 bytes (128K + 4K)
135,168 bytes (128K + 4K)
135,168 bytes (128K + 4K)
SECTOR 1 = 248 Pages
SECTOR 2 = 256 Pages
SECTOR 3 = 256 Pages
SECTOR 16 = 256 Pages
4,224 bytes (4K + 128)
SECTOR 0 = 8 Pages
The device operation is controlled by instructions from the host processor. The list of
instructions and their associated opcodes are contained in Tables 1 through 4. A valid
instruction starts with the falling edge of CS followed by the appropriate 8-bit opcode
and the desired buffer or main memory address location. While the CS pin is low, tog-
gling the SCK pin controls the loading of the opcode and the desired buffer or main
memory address location through the SI (serial input) pin. All instructions, addresses
and data are transferred with the most significant bit (MSB) first.
Buffer addressing is referenced in the datasheet using the terminology BFA9 - BFA0 to
denote the ten address bits required to designate a byte address within a buffer. Main
memory addressing is referenced using the terminology PA11 - PA0 and BA9 - BA0
where PA11 - PA0 denotes the 12 address bits required to designate a page address
and BA9 - BA0 denotes the ten address bits required to designate a byte address within
the page.
By specifying the appropriate opcode, data can be read from the main memory or from
either one of the two data buffers. The DataFlash supports two categories of read
modes in relation to the SCK signal. The differences between the modes are in respect
to the inactive state of the SCK signal as well as which clock cycle data will begin to be
output. The two categories, which are comprised of four modes total, are defined as
Inactive Clock Polarity Low or Inactive Clock Polarity High and SPI Mode 0 or SPI
Mode 3. A separate opcode (refer to Table 1 on page 10 for a complete list) is used to
select which category will be used for reading. Please refer to the “Detailed Bit-level
Read Timing” diagrams in this datasheet for details on the clock cycle sequences for
each mode.
CONTINUOUS ARRAY READ: By supplying an initial starting address for the main
memory array, the Continuous Array Read command can be utilized to sequentially
read a continuous stream of data from the device by simply providing a clock signal; no
additional addressing information or control signals need to be provided. The DataFlash
incorporates an internal address counter that will automatically increment on every clock
SECTOR 0
BLOCK ARCHITECTURE
Block = 4224 bytes
BLOCK 509
BLOCK 510
BLOCK 511
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
BLOCK 66
BLOCK 0
BLOCK 1
(4K + 128)
8 Pages
PAGE ARCHITECTURE
AT45DB161B
Page = 528 bytes
PAGE 4093
PAGE 4094
PAGE 4095
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
(512 + 16)
3

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