UPD44646183AF5-E25-FQ1 Renesas Electronics America, UPD44646183AF5-E25-FQ1 Datasheet - Page 11

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UPD44646183AF5-E25-FQ1

Manufacturer Part Number
UPD44646183AF5-E25-FQ1
Description
SRAM DDRII 72MBIT 165-PBGA
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPD44646183AF5-E25-FQ1

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II+
Memory Size
72M (4M x 18)
Speed
400MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD44646183AF5-E25-FQ1
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
UPD44646183AF5-E25-FQ1-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Truth Table
2.0 Clock Cycles Read Latency
[
2.5 Clock Cycles Read Latency
[
Remarks
μ
μ
WRITE cycle
Load address, input write data on
consecutive K and K# rising edge
READ cycle
Load address, read data on
consecutive K and K# rising edge
NOP (No operation)
Clock stop
WRITE cycle
Load address, input write data on
consecutive K and K# rising edge
READ cycle
Load address, read data on
consecutive K and K# rising edge
NOP (No operation)
Clock stop
PD44646092A-A], [
PD44646093A-A], [
1. H : HIGH, L : LOW, × : don’t care, ↑ : rising edge.
2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at K and K# rising edges.
3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
4. This device contains circuitry that ensure the outputs to be in high impedance during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. A+0 refers to the address input during a WRITE or READ cycle.
7. It is recommended that K = K# when clock is stopped. This is not essential but permits most rapid restart
Operation
Operation
Remarks listed below are for both products with 2.0 and 2.5 Clock Cycles Read Latency.
K. All control inputs are registered during the rising edge of K.
A+1 refers to the next internal burst address in accordance with the burst sequence.
by overcoming transmission line charging symmetrically.
μ
PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A
μ
μ
PD44646182A-A], [
PD44646183A-A], [
Stopped
Stopped
L → H
L → H
L → H
L → H
L → H
L → H
CLK
CLK
Preliminary Data Sheet M19960EJ1V0DS
μ
μ
PD44646362A-A]
PD44646363A-A]
LD#
LD#
H
H
L
L
X
L
L
X
R,W#
R,W#
H
X
X
H
X
X
L
L
Data in
Data out
DQ = High-Z
Previous state
Data in
Data out
DQ = High-Z
Previous state
Output clock
Output clock
Output data
Output data
Input clock
Input clock
Input data
Input data
DQ
DQ
K#(t+2) ↑
K(t+1) ↑
Q
K(t+2) ↑
K(t+1) ↑
Q
D
D
A
A
A
A
(A+0)
(A+0)
(A+0)
(A+0)
K#(t+1) ↑
K#(t+2) ↑
K#(t+1) ↑
D
Q
D
Q
K(t+3) ↑
A
A
A
A
(A+1)
(A+1)
(A+1)
(A+1)
11

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