MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 44

• Manufacturer Part Number: MT29F2G08ABAEAWP-IT:E
• Description: IC FLASH 2G 3.3V 2KBPG 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAWP-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

GET FEATURES (EEh)
Figure 29: GET FEATURES (EEh) Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
The GET FEATURES (EEh) command reads the subfeature parameters (P1–P4) from the
specified feature address. This command is accepted by the target only when all die
(LUNs) on the target are idle.
Writing EEh to the command register puts the target in get features mode. The target
stays in this mode until another valid command is issued.
When the EEh command is followed by a feature address, the target goes busy for
t
tion, the READ MODE (00h) command must be used to re-enable data output mode.
After
eters.
Cycle type
FEAT. If the READ STATUS (70h) command is used to monitor for command comple-
R/B#
I/Ox
t
FEAT completes, the host enables data output mode to read the subfeature param-
Command
EEh
Address
FA
t WB
44
t FEAT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
t RR
D
P1
OUT
D
P2
OUT
Feature Operations
© 2009 Micron Technology, Inc. All rights reserved.
D
P3
OUT
D
P4
OUT