SST25VF032B-80-4I-QAE Microchip Technology, SST25VF032B-80-4I-QAE Datasheet - Page 22

• Manufacturer Part Number: SST25VF032B-80-4I-QAE
• Description: IC FLASH SER 32M 80MHZ SPI 8WSON
• Manufacturer: Microchip Technology

Specifications of SST25VF032B-80-4I-QAE

• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WSON
• Format - Memory: FLASH
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Data Bus Width: 8 bit
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 25 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Electrical Specifications
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
Table 8: Operating Range
Table 9: AC Conditions of Test
Table 10:DC Operating Characteristics
Range
Industrial
Symbol Parameter
I
I
I
I
I
I
I
V
V
V
V
V
DDR
DDR2
DDR3
DDW
SB
LI
LO
IL
IH
OL
OL2
OH
1. See Figure 26
1. Output shorted for no more than one second. No more than one output shorted at a time.
Read Current
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Input Rise/Fall Time
5ns
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
V
0.7 V
DD
Min
22
-0.2
A
DD
= 25°C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Limits
(VDD = 2.7-3.6V)
Max Units
0.8
0.2
0.4
10
20
25
30
20
Ambient Temp
-40°C to +85°C
1
1
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
32 Mbit SPI Serial Flash
Test Conditions
CE# = 0.1 V
CE# = 0.1 V
CE# = 0.1 V
CE# = V
CE# = V
V
V
V
V
I
I
I
OL
OL
OH
IN
OUT
DD
DD
= 100 µA, V
= 1.6 mA, V
= GND to V
= -100 µA, V
= V
= V
= GND to V
DD
DD
DD
DD
, V
Min
Max
Output Load
DD
DD
DD
C
IN
/0.9 V
/0.9 V
/0.9 V
L
DD
DD
DD
= V
DD
= 30 pF
DD
, V
= V
= V
DD
= V
, V
DD
DD
DD
SST25VF032B
DD
DD
DD
or V
DD
DD
@25 MHz, SO = open
@66 MHz, SO = open
@80 MHz, SO = open
= V
Min
Min
= V
Min
SS
DD
2.7-3.6V
DD
S71327-04-000
Max
V
Max
DD
Data Sheet
DD
DD
+0.5V
+2.0V
T10.0 1327
T9.1 1327
T8.1 1327
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