SST25VF040B-50-4I-QAF Microchip Technology, SST25VF040B-50-4I-QAF Datasheet - Page 15

• Manufacturer Part Number: SST25VF040B-50-4I-QAF
• Description: IC FLASH SER 4MB 50MHZ SPI 8WSON
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-50-4I-QAF

• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WSON
• Format - Memory: FLASH
• Speed: 50MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Architecture: Sectored
• Interface Type: SPI
• Access Time: 50 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 32 KB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A
determine the sector address (SA
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T
Erase sequence.
Figure 12:Sector-Erase Sequence
SE
for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-
SCK
CE#
23
SO
SI
-A
0
MODE 3
MODE 0
]. Address bits [A
X
), remaining address bits can be V
MSB
0 1 2 3 4 5 6 7 8
15
20
HIGH IMPEDANCE
MS
-A
12
] (A
MSB
ADD.
4 Mbit SPI Serial Flash
MS
= Most Significant address) are used to
15 16
ADD.
IL
23 24
or V
1295 SecErase.0
ADD.
IH.
CE# must be driven high
31
SST25VF040B
S71295-06-000
Data Sheet
02/11