SST25VF040B-80-4I-S2AE Microchip Technology, SST25VF040B-80-4I-S2AE Datasheet - Page 23

• Manufacturer Part Number: SST25VF040B-80-4I-S2AE
• Description: IC FLASH SER 4MB 80MHZ SPI 8SOIC
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-80-4I-S2AE

• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Format - Memory: FLASH
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Ic Interface Type: SPI
• Clock Frequency: 80MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 Mbit SPI Serial Flash
SST25VF040B
TABLE 9: DC Operating Characteristics (25VF040B-80-xx-xxxE)
TABLE 10: Recommended System Power-up Timings
TABLE 11: Capacitance
TABLE 12: Reliability Characteristics
©2009 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DDR
DDR3
DDW
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OL2
OH
OUT
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
Parameter
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Parameter
V
V
Description
Output Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
DD
Min to Read Operation
Min to Write Operation
(T
A
= 25°C, f=1 Mhz, other pins open)
V
0.7 V
DD
Min
-0.2
DD
Limits
Minimum Specification
Max
0.2
0.4
0.8
20
12
20
30
23
1
1
100 + I
10,000
Units
100
mA
mA
mA
µA
µA
µA
V
V
V
V
V
DD
Test Conditions
CE#=V
CE#=V
V
V
V
V
I
I
I
CE#=0.1 V
CE#=0.1 V
OL
OL
OH
IN
OUT
DD
DD
=100 µA, V
=1.6 mA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
DD
Test Condition
Cycles
IN
Units
Years
/0.9 V
/0.9 V
mA
=V
DD
DD
DD
V
Minimum
DD
V
DD
OUT
, V
=V
=V
DD
IN
=V
, V
10
10
DD
DD
DD
DD
DD
= 0V
or V
DD
= 0V
DD
=V
@33 MHz, SO=open
@80 MHz, SO=open
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
Min
Min
=V
Min
SS
DD
DD
Max
Max
S71295-05-000
Maximum
Units
12 pF
Data Sheet
6 pF
µs
µs
T10.0 1295
T11.0 1295
T12.0 1295
T9.0 1295
10/09