SST25VF010A-33-4C-QAE Microchip Technology, SST25VF010A-33-4C-QAE Datasheet - Page 11
![IC FLASH SER 1MB 33MHZ SPI 8WSON](/photos/16/11/161150/sst25vf010a_sml.jpg)
SST25VF010A-33-4C-QAE
Manufacturer Part Number
SST25VF010A-33-4C-QAE
Description
IC FLASH SER 1MB 33MHZ SPI 8WSON
Manufacturer
Microchip Technology
Specifications of SST25VF010A-33-4C-QAE
Memory Type
FLASH
Memory Size
1M (128K x 8)
Operating Temperature
0°C ~ 70°C
Package / Case
8-WSON
Format - Memory
FLASH
Speed
33MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Architecture
Sectored
Interface Type
SPI
Access Time
33 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
10 mA
Mounting Style
SMD/SMT
Organization
4 KB x 32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
1 Mbit SPI Serial Flash
SST25VF010A
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
©2006 Silicon Storage Technology, Inc.
FIGURE 6: B
YTE
-P
ROGRAM
SCK
CE#
SO
SI
MODE 3
MODE 0
S
EQUENCE
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPEDANCE
MSB
11
ADD.
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T
self-timed Byte-Program operation. See Figure 6 for the
Byte-Program sequence.
15 16
ADD.
23 24
ADD.
31 32
MSB
D
BP
IN
1265 F06.0
LSB
for the completion of the internal
39
23
S71265-02-000
-A
0
]. Following the
Data Sheet
1/06