CY7C1515V18-167BZC Cypress Semiconductor Corp, CY7C1515V18-167BZC Datasheet

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CY7C1515V18-167BZC

Manufacturer Part Number
CY7C1515V18-167BZC
Description
IC SRAM 72MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1515V18-167BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1515V18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Configurations
CY7C1511V18 – 8M x 8
CY7C1526V18 – 8M x 9
CY7C1513V18 – 4M x 18
CY7C1515V18 – 2M x 36
Selection Guide
Cypress Semiconductor Corporation
Document Number: 38-05363 Rev. *F
Maximum Operating Frequency
Maximum Operating Current
Separate independent read and write data ports
300 MHz clock for high bandwidth
4-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
Two input clocks (K and K) for precise DDR timing
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Available in x8, x9, x18, and x36 configurations
Full data coherency, providing most current data
Core V
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Supports concurrent transactions
SRAM uses rising edges only
DD
= 1.8 (± 0.1V); IO V
Description
DDQ
= 1.4V to V
x18
x36
x8
x9
300 MHz
1020
1230
300
930
940
DD
198 Champion Court
278 MHz
1140
278
865
870
950
72-Mbit QDR™-II SRAM 4-Word
Functional Description
The CY7C1511V18, CY7C1526V18, CY7C1513V18, and
CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR-II archi-
tecture has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus that exists with
common IO devices. Each port can be accessed through a
common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR-II read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address
(CY7C1511V18), 9-bit words (CY7C1526V18), 18-bit words
(CY7C1513V18), or 36-bit words (CY7C1515V18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K and C and C), memory bandwidth is maximized
while
“turn-arounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
250 MHz
simplifying
1040
location
250
790
795
865
San Jose
CY7C1513V18, CY7C1515V18
CY7C1511V18, CY7C1526V18
is
,
system
CA 95134-1709
200 MHz
associated
Burst Architecture
200
655
660
715
850
design
with
Revised August 06, 2008
167 MHz
by
167
570
575
615
725
four
eliminating
408-943-2600
8-bit
MHz
Unit
mA
words
bus
[+] Feedback

Related parts for CY7C1515V18-167BZC

CY7C1515V18-167BZC Summary of contents

Page 1

... Because data can be trans- ferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized ...

Page 2

... D [8:0] 21 Address A (20:0) Register K CLK K Gen. DOFF V REF Control WPS Logic BWS [0] Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Write Write Write Write Address Reg Reg Reg Reg Register Control Logic Read Data Reg Reg. Reg. 16 Reg. Write Write ...

Page 3

... Logic Block Diagram (CY7C1513V18 [17:0] 20 Address A (19:0) Register K CLK K Gen. DOFF V REF Control WPS Logic BWS [1:0] Logic Block Diagram (CY7C1515V18 [35:0] 19 Address A (18:0) Register K CLK K Gen. DOFF V REF Control WPS Logic BWS [3:0] Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 ...

Page 4

... Pin Configuration The pin configuration for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follow DOFF V V REF DDQ TDO TCK DOFF V V REF DDQ TDO TCK A Note 1. V /144M and V /288M are not connected to the die and can be tied to any voltage level Document Number: 38-05363 Rev. *F ...

Page 5

... Pin Configuration (continued) The pin configuration for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follow /144M D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H DOFF V V REF DDQ D14 Q14 L NC Q15 D15 D16 N NC D17 Q16 Q17 R TDO TCK ...

Page 6

... CY7C1511V18 arrays each for CY7C1526V18 arrays each 18) for CY7C1513V18 and arrays each of 512K x 36) for CY7C1515V18. Therefore, only 21 address inputs are needed to access the entire memory array of CY7C1511V18 and CY7C1526V18, 20 address inputs for CY7C1513V18 and 19 address inputs for CY7C1515V18 ...

Page 7

... Ground for the Device Power Supply Power Supply Inputs for the Outputs of the Device. DDQ Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Pin Description Switching Characteristics on page 24. Switching Characteristics on page 24. output impedance are set to 0.2 x RQ, where resistor connected [x:0] ...

Page 8

... Functional Overview The CY7C1511V18, CY7C1526V18, CY7C1515V18 are synchronous pipelined Burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port ...

Page 9

... All pending transactions (read and write) are completed before the device is deselected. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V to allow the SRAM to adjust its output SS driver impedance ...

Page 10

... BWS# (CPU CLKIN/CLKIN# or Source K ASIC) Source K# Delayed K Delayed 50ohms Truth Table The truth table for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follows. Operation K RPS WPS [8] Write Cycle: L-H H Load address on the rising edge of K; input write data on two consecutive K and K rising edges. ...

Page 11

... Note 10. Is based on a write cycle that was initiated in accordance with the different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 [2, 10] Comments ) are written into the device. [7:0] ) are written into the device ...

Page 12

... Write Cycle Descriptions The write cycle description table for CY7C1515V18 follows. BWS BWS BWS BWS L– – L– – L– – L– – L– – L– – Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 [2, 10] K Comments – During the Data portion of a write sequence, all four bytes (D the device. L– ...

Page 13

... TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in page 16 ...

Page 14

... TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. ...

Page 15

... The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 TEST-LOGIC/ 0 IDLE Note 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 [11] 1 SELECT DR-SCAN 0 1 CAPTURE- SHIFT- ...

Page 16

... These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the 13. Overshoot: V (AC) < 0.85V (Pulse width less than t IH DDQ 14. All Voltage referenced to Ground. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 0 Bypass Register Instruction Register ...

Page 17

... Test conditions are specified using the load in TAP AC Test Conditions. t Document Number: 38-05363 Rev. *F Description [16] Figure 2. TAP Timing and Test Conditions 0.9V 1.8V 50Ω TMSH t TMSS t TDIS t TDIH t TDOV / ns CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Min Max ALL INPUT PULSES 0.9V t TCYC t TDOX Page Unit ns MHz ...

Page 18

... Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Value CY7C1526V18 CY7C1513V18 000 000 00000110100 00000110100 ...

Page 19

... Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D ...

Page 20

... DDQ DOFF Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 DLL Constraints ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as t ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior ...

Page 21

... During this time V < V and /2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. (max) = 0.95V or 0.54V , whichever is smaller. REF DDQ CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Ambient [17] Temperature ( 0°C to +70°C 1.8 ± 0.1V 1.4V to –40°C to +85°C ...

Page 22

... DD I Automatic Power down SB1 Current AC Electrical Characteristics [13] Over the Operating Range Parameter Description V Input HIGH Voltage IH V Input LOW Voltage IL Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Test Conditions V = Max, 200MHz (x8 mA, (x9) OUT 1/t MAX CYC (x18) (x36) 167MHz ...

Page 23

... Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V 250Ω, V pulse levels of 0.25V to 1.25V, and output loading of the specified I Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Test Conditions T = 25° MHz ...

Page 24

... This part has a voltage regulator internally; t POWER initiated. 25. For D0 data signal on CY7C1526V18 device Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 300 MHz 278 MHz Min Max Min Max Min Max Min Max Min Max [24 3.3 8 ...

Page 25

... CHZ CLZ 27. At any voltage and temperature t is less than t CHZ Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 300 MHz 278 MHz Min Max Min Max Min Max Min Max Min Max – 0.45 – 0.45 – ...

Page 26

... Outputs are disabled (High-Z) one clock cycle after a NOP. 30. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 [28, 29, 30] WRITE READ WRITE ...

Page 27

... CY7C1511V18-278BZXI CY7C1526V18-278BZXI CY7C1513V18-278BZXI CY7C1515V18-278BZXI Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( ...

Page 28

... CY7C1511V18-200BZXI CY7C1526V18-200BZXI CY7C1513V18-200BZXI CY7C1515V18-200BZXI Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( ...

Page 29

... Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) Ordering Code 167 CY7C1511V18-167BZC CY7C1526V18-167BZC CY7C1513V18-167BZC CY7C1515V18-167BZC CY7C1511V18-167BZXC CY7C1526V18-167BZXC CY7C1513V18-167BZXC CY7C1515V18-167BZXC CY7C1511V18-167BZI CY7C1526V18-167BZI CY7C1513V18-167BZI CY7C1515V18-167BZI CY7C1511V18-167BZXI CY7C1526V18-167BZXI ...

Page 30

... Package Diagram Figure 6. 165-ball FBGA ( 1.4 mm), 51-85195 Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 51-85195-*A Page [+] Feedback ...

Page 31

... Document History Page Document Title: CY7C1511V18/CY7C1526V18/CY7C1513V18/CY7C1515V18, 72-Mbit QDR™-II SRAM 4-Word Burst Archi- tecture Document Number: 38-05363 SUBMISSION REV. ECN NO. DATE ** 226981 See ECN *A 257089 See ECN *B 319496 See ECN *C 403231 See ECN *D 467290 See ECN Document Number: 38-05363 Rev. *F CY7C1511V18, CY7C1526V18 CY7C1513V18, CY7C1515V18 ORIG ...

Page 32

... Document History Page Document Title: CY7C1511V18/CY7C1526V18/CY7C1513V18/CY7C1515V18, 72-Mbit QDR™-II SRAM 4-Word Burst Archi- tecture Document Number: 38-05363 *E 2511080 See ECN *F 2549270 08/06/08 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress ...

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