CY62157EV30LL-45ZSXA Cypress Semiconductor Corp, CY62157EV30LL-45ZSXA Datasheet - Page 16

• Manufacturer Part Number: CY62157EV30LL-45ZSXA
• Description: IC SRAM 8MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62157EV30LL-45ZSXA

• Memory Size: 8M (512K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document History Page
Document #: 38-05445 Rev. *H
Document Title: CY62157EV30 MoBL
Document Number: 38-05445
Rev.
*A
*B
*C
*D
*E
**
ECN No.
1045801
202940
291272
444306
467052
925501
Orig. of
Change
NXR
NXR
VKN
VKN
AJU
SYT
Submission
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
Date
®
, 8 Mbit (512K x 16) Static RAM
New Data Sheet
Converted from Advance Information to Preliminary
Removed 48-TSOP I Package and the associated footnote
Added footnote stating 44 TSOP II Package has only one CE on Page # 2
Changed V
Changed I
Changed t
Changed t
Changed t
ns Speed Bins respectively
Changed t
respectively
Changed t
Bins respectively
Changed t
Added Lead-Free Package Information
Converted from Preliminary to Final.
Changed ball E3 from DNU to NC
Removed redundant footnote on DNU.
Removed 35 ns speed bin
Removed “L” bin
Added 48 pin TSOP I package
Added Automotive product information.
Changed the I
to 25 mA for test condition f = fax = 1/t
Changed the I
Changed the I
A to 2 A respectively.
Modified ISB
Updated Thermal Resistance table.
Changed Test Load Capacitance from 50 pF to 30 pF.
Added Typ value for I
Changed the I
Corrected t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Added footnote #15
Updated the ordering Information and replaced the Package Name column with
Package Diagram.
Modified Data sheet to include x8 configurability.
Updated the Ordering Information table
Removed Automotive-E information
Added Preliminary Automotive-A information
Added footnote #10 related to I
Added footnote #15 related AC timing parameters
Converted Automotive-A specs from preliminary to final
Updated footnote #9
HZOE
CCDR
OHA
DOE
HZCE
SCE
SD
LZOE
LZCE
HZCE
LZBE
PWE
SD
LZWE
R
CC
1
in Data Retention Characteristics from 100 s to t
from 15 and 20 ns to 18 and 22 ns for 35 and 45 ns Speed Bins respectively
from 22 to 25
, t
SB1
CC
CC
CCDR
test condition to include BHE, BLE
stabilization time in footnote #7 from 100 s to 200 s
from 6 to 10 ns for both 35 and 45 ns Speed Bins
from 15 to 18 ns for 35 ns Speed Bin
from 30 to 35
, t
AW
from 6 to 5
from 3 to 5
from 6 to 10
from 12 and 15 ns to 18 and 22 ns for 35 and 45 ns Speed Bins
from 22 to 18
from 6 to 10
from 4 to 4.5 A
HZBE
Typ value from 16 mA to 18 mA and I
Max value from 2.3 mA to 3 mA for test condition f = 1MHz.
and I
and t
Max value from 4.5 A to 5 A
CCDR .
and t
SB2
BW
Max value from 4.5 A to 8 A and Typ value from 0.9
from 25 and 40 ns to 30 and 35 ns for 35 and 45 ns Speed
HZWE
Description of Change
SB2
from 12 and 15 ns to 15 and 18 ns for 35 and 45
and I
RC.
CCDR
CY62157EV30 MoBL
CC
Max value from 28 mA
RC
ns.
Page 16 of 17
®
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