RC48F4400P0VB0EJ NUMONYX, RC48F4400P0VB0EJ Datasheet - Page 58

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RC48F4400P0VB0EJ

Manufacturer Part Number
RC48F4400P0VB0EJ
Description
IC FLASH 256MBIT 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of RC48F4400P0VB0EJ

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
512M (32Mx16)
Speed
100ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC48F4400P0VB0EJ
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 25: Continuous Burst Read, Showing An Output Delay Timing
Notes:
1.
2.
Figure 26: Synchronous Burst-Mode Four-Word Read Timing
Note:
Datasheet
58
Address [A]
Data [D/Q]
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
ADV# [V]
OE# [G]
WAIT [T]
CLK [C]
CE# [E]
OE# [G]
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the starting address is
not 4-word boundary aligned.
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during initial latency and
deasserted during valid data (RCR.10 = 0, WAIT asserted low).
R105
R105
R105
R105
R301
R301
R302
R303
R302
R303
R101
R101
R102
R102
A
R306
R306
R15
R106
R106
R15
R2
R3
R7
R2
R7
R3
R4
R4
y
R307
R304
R307
R304
Q0
R312
R305
R305
R304
Q1
R305
R304
Q2
R305
R304
Order Number: 320002-10
Q3
R17
R9
R10
R8
R304
R305
P30-65nm
Mar 2010

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