NAND01GW3B2CZA6E NUMONYX, NAND01GW3B2CZA6E Datasheet - Page 3

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NAND01GW3B2CZA6E

Manufacturer Part Number
NAND01GW3B2CZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet

Specifications of NAND01GW3B2CZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Package
63VFBGA
Cell Type
NAND
Density
1 Gb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
128KByte x 1024
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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product line card
Numonyx® NAND flash memory
Density
8 Gb
16 Gb
32 Gb
Part Number
NAND08Gw3B2CN6e
NAND08Gw3F2AN6e
NAND16Gw3F2AN6e
NAND32Gw3F4AN6e
Density
8 Gb
8 Gb
16 Gb
32 Gb
NAND Family
SLC LP
SLC vLP (4KB)
SLC vLP (4KB)
SLC vLP (4KB)
voltage
3.0v
3.0v
3.0v
3.0v
Bus width - Flash
x8
x8
x8
x8
Package Type
TSOP48
TSOP48
TSOP48
TSOP48
Package Dimension
12x20mm
12x20mm
12x20mm
12x20mm

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