NAND512R3A2DZA6E NUMONYX, NAND512R3A2DZA6E Datasheet - Page 8

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NAND512R3A2DZA6E

Manufacturer Part Number
NAND512R3A2DZA6E
Description
IC FLASH 512MBIT 63VFBGA
Manufacturer
NUMONYX

Specifications of NAND512R3A2DZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512R3A2DZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND512R3A2DZA6E
Manufacturer:
ST
0
Description
Table 3.
Figure 2.
8/53
I/O8-I/O15
I/O0-I/O7
Signal
V
V
WP
NC
DU
RB
AL
CL
W
R
E
DD
SS
WP
CL
AL
W
E
R
Signals names
Logic block diagram
Data input/outputs for x16 devices
Data inputs/outputs, address inputs, or command inputs for x8 and
x16 devices
Address Latch Enable
Command Latch Enable
Chip Enable
Read Enable
Ready/Busy (open-drain output)
Write Enable
Write Protect
Supply voltage
Ground
Not connected internally
Do not use
Command register
register/counter
Command
interface
Address
logic
RB
P/E/R controller,
high voltage
generator
Function
I/O buffers & latches
I/O0-I/O7, x8/x16
I/O8-I/O15, x16
NAND512xxA2D, NAND01GxxA2C
Page buffer
Y decoder
memory array
NAND flash
Power supply
Direction
Ground
Output
Input
Input
Input
Input
Input
Input
I/O
I/O
AI07561c

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