M28W640FCT70N6F NUMONYX, M28W640FCT70N6F Datasheet - Page 60

• Manufacturer Part Number: M28W640FCT70N6F
• Description: IC FLASH 64MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M28W640FCT70N6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Common Flash Interface (CFI)
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Table 28.
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C6h
00B4h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
CFI Query System Interface Information
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical time-out per single word program = 2
Typical time-out for Double/Quadruple Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for Word program = 2
Maximum time-out for Double/Quadruple Word Program = 2
typical
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
M28W640FCT, M28W640FCB
n
µs
ms
n
times typical
n
µs
n
times
512µs
512µs
Value
11.4V
12.6V
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s