M27C2001-12F1 STMicroelectronics, M27C2001-12F1 Datasheet - Page 15

• Manufacturer Part Number: M27C2001-12F1
• Description: IC EPROM 2MBIT 120NS 32CDIP
• Manufacturer: STMicroelectronics

Specifications of M27C2001-12F1

• Format - Memory: EPROMs
• Memory Type: UV EPROM
• Memory Size: 2M (256K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-CDIP (0.600", 15.24mm) Window
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA (Read)
• Current, Operating: 30 mA (Read)
• Current, Output, Leakage: ±10 μA (Read)
• Current, Supply: 30 mA
• Density: 2M
• Organization: 256K×8
• Package Type: FDIP32W
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 120 ns
• Time, Fall: ≤20 ns
• Time, Programmable: 100 μs
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V (Read)
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V (Read)
• Voltage, Input, Low Level: -0.3 V (Min.)
• Voltage, Output, High: 4.3 V (Read)
• Voltage, Output, Low: 0.4 V (Read)
• Voltage, Programmable: 11.5 V (Min.)
• Voltage, Supply: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Table 8.
1. V
Table 9.
1. V
2. In case of 55ns speed see High Speed AC measurement conditions.
3. Sampled only, not 100% tested.
15/25
t
t
Symbol
GHQZ
EHQZ
t
t
Symbol
t
t
GLQV
AXQX
AVQV
ELQV
CC
CC
V
V
V
V
I
I
V
I
CC
PP
OH
LI
OL
IH
ID
IL
must be applied simultaneously with or before V
must be applied simultaneously with or before V
(3)
(3)
t
Programming Mode DC Characteristics
(T
Read Mode AC Characteristics
(T
t
ACC
t
t
Alt
t
t
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
OE
OH
CE
DF
DF
A
A
= 25°C; V
= 0 to 70°C or –40 to 85°C; V
Address Valid
to Output
Valid
Chip Enable
Low to Output
Valid
Output Enable
Low to Output
Valid
Chip Enable
High to Output
Hi-Z
Output Enable
High to Output
Hi-Z
Address
Transition to
Output
Transition
Parameter
Parameter
CC
= 6.25V ± 0.25V; V
Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
Test
IL
IL
IL
IL
IL
IL
IL
IL
,
,
PP
PP
CC
(1)
Min
and removed simultaneously or after V
and removed simultaneously or after V
PP
0
0
0
Test Condition
= 5V ± 5% or 5V ± 10%; V
I
-55
OH
I
0 V
OL
= 12.75V ± 0.25V)
E = V
(2)
= –400µA
= 2.1mA
Max
IN
(1)
55
55
30
30
30
IL
V
IH
Min
0
0
0
-70
M27C2001
Max
70
70
35
30
30
–0.3
11.5
Min
2.4
2
Min Max
0
0
0
PP
-80
= V
PP
PP
80
80
40
30
30
.
.
V
CC
CC
Max
12.5
±10
0.8
0.4
)
50
50
+ 0.5
Min
0
0
0
-90
Max
M27C2001
90
90
40
30
30
Unit
mA
mA
µA
V
V
V
V
V
Unit
ns
ns
ns
ns
ns
ns