M28W320FCT70N6E NUMONYX, M28W320FCT70N6E Datasheet - Page 53

IC FLASH 32MBIT 70NS 48TSOP

M28W320FCT70N6E

Manufacturer Part Number
M28W320FCT70N6E
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M28W320FCT70N6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Memory Configuration
2M X 16
Ic Interface Type
Parallel
Access Time
70ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 29.
Offset Word
Mode
2Ah
2Bh
2Ch
27h
28h
29h
2Dh
2Eh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
2Fh
30h
31h
32h
33h
34h
Device Geometry Definition
003Eh
003Eh
0016h
0001h
0000h
0003h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
Region 1 Information
Number of identical-size erase block = 003Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase block = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 003Eh=1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of bytes
Description
n
64 KByte
64 KByte
4 MByte
8 KByte
8 KByte
Async.
Value
x16
63
63
8
2
8
8
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