M28W160ECB70ZB6E NUMONYX, M28W160ECB70ZB6E Datasheet - Page 7

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M28W160ECB70ZB6E

Manufacturer Part Number
M28W160ECB70ZB6E
Description
IC FLASH 16MBIT 70NS 46TFBGA
Manufacturer
NUMONYX
Datasheet

Specifications of M28W160ECB70ZB6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
46-TFBGA
Package
46TFBGA
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 31
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M28W160ECB70ZB6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M28W160ECB70ZB6E
Manufacturer:
ST
0
Figure 4. TFBGA Connections (Top view through package)
Figure 5. Block Addresses
Note: Also see
APPENDIX
FFFFF
F8FFF
F7FFF
0FFFF
FF000
07FFF
F8000
F0000
08000
00000
C
D
A
B
E
F
Top Boot Block Addresses
M28W160ECT
A.,
32 KWords
32 KWords
32 KWords
4 KWords
4 KWords
Table 23.
V DDQ
V SS
A14
A15
A16
A13
1
and
DQ14
DQ15
DQ7
A11
A10
A12
2
Table 24.
4 KWord Blocks
32 KWord Blocks
DQ13
DQ5
DQ6
A8
A9
Total of 8
W
Total of 31
3
for a full listing of the Block Addresses.
DQ11
DQ12
V PP
DQ4
RP
4
V DD
DQ2
DQ3
WP
A18
5
FFFFF
F7FFF
0FFFF
07FFF
F8000
F0000
00FFF
00000
08000
07000
Bottom Boot Block Addresses
DQ10
DQ8
DQ9
A19
A17
A6
6
M28W160ECB
32 KWords
32 KWords
4 KWords
32 KWords
4 KWords
M28W160ECT, M28W160ECB
DQ0
DQ1
A7
A5
A3
E
7
V SS
A4
A2
A1
A0
G
8
4 KWord Blocks
AI03804
32 KWord Blocks
AI07544
Total of 8
Total of 31
7/50

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