M29W320DB70N6E NUMONYX, M29W320DB70N6E Datasheet - Page 21
![IC FLASH 32MBIT 70NS 48TSOP](/photos/7/28/72875/m29w320db70n6e_sml.jpg)
M29W320DB70N6E
Manufacturer Part Number
M29W320DB70N6E
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W320DB70ZE6F.pdf
(56 pages)
Specifications of M29W320DB70N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 63
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3604
497-3604
497-3604
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W320DB70N6E
Manufacturer:
ST
Quantity:
3 000
Company:
Part Number:
M29W320DB70N6E
Manufacturer:
ST
Quantity:
3 198
Part Number:
M29W320DB70N6E
Manufacturer:
MICRON/美光
Quantity:
20 000
4.11
4.12
Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.
Block Protect and Chip Unprotect commands
Each block can be separately protected against accidental Program or Erase. The whole
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in
Appendix C: Block
Protection.
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