M29W640GB70ZF6E NUMONYX, M29W640GB70ZF6E Datasheet - Page 49
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M29W640GB70ZF6E
Manufacturer Part Number
M29W640GB70ZF6E
Description
IC FLASH 64MBIT 70NS 64TBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W640GH70NB6E.pdf
(90 pages)
Specifications of M29W640GB70ZF6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W640GB70ZF6E
Manufacturer:
ST
Quantity:
9 180
Company:
Part Number:
M29W640GB70ZF6E
Manufacturer:
Numonyx
Quantity:
8 160
Company:
Part Number:
M29W640GB70ZF6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 18.
1. Sampled only, not 100% tested.
Symbol
t
t
t
t
t
GLQX
EHQZ
EHQZ
ELQX
t
t
t
t
t
t
t
t
t
AVQV1
t
t
t
GHQZ
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAX
ELBL
(1)
(1)
(1)
(1)
t
t
t
t
t
t
PAGE
FHQV
t
ELFH
FLQZ
ELFL
t
ACC
t
t
t
Alt
OLZ
t
t
t
Read AC characteristics
RC
OE
OH
CE
HZ
DF
LZ
Address Valid to Next Address Valid
Address Valid to Output Valid
Address Valid to Output Valid (Page)
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
Test condition
E = V
E = V
E = V
G = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
,
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
60
60
60
25
60
25
25
25
25
25
0
0
0
5
M29W640GB,
M29W640GH,
M29W640GT,
M29W640GL
70
70
70
30
70
30
30
30
25
30
0
0
0
5
90
90
90
30
90
30
30
30
25
30
0
0
0
5
49/90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns