M29W160EB70N6E NUMONYX, M29W160EB70N6E Datasheet - Page 17
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M29W160EB70N6E
Manufacturer Part Number
M29W160EB70N6E
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W160ET70N6E.pdf
(42 pages)
Specifications of M29W160EB70N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Ic Interface Type
Parallel
Access Time
70ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3602
497-3602
497-3602
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W160EB70N6E
Manufacturer:
MICRON
Quantity:
6 872
Company:
Part Number:
M29W160EB70N6E
Manufacturer:
ST
Quantity:
8 840
Company:
Part Number:
M29W160EB70N6E
Manufacturer:
Numonyx
Quantity:
34 560
Company:
Part Number:
M29W160EB70N6E
Manufacturer:
ST
Quantity:
4 000
Part Number:
M29W160EB70N6E
Manufacturer:
ST
Quantity:
20 000
Table 5. Commands, 8-bit mode, BYTE = V
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com-
mands on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Pro-
gram/Erase Controller completes and the memory returns to Read Mode.
CFI Query. Command is valid when device is ready to read array data or when device is in Auto Select mode.
Command
6+
1
3
3
4
3
2
2
6
1
1
1
Addr
AAA
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
X
X
1st
Data Addr Data Addr
IL
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
or DQ15 when BYTE is V
555
555
555
555
555
555
PA
X
2nd
IL
PD
55
55
55
55
00
55
55
AAA
AAA
AAA
AAA
AAA
X
Bus Write Operations
IH
.
3rd
Data Addr Data Addr
F0
A0
90
20
80
80
AAA
AAA
PA
4th
M29W160ET, M29W160EB
PD
AA
AA
555
555
5th
Data Addr Data
55
55
AAA
BA
6th
17/42
10
30