M29W640GL70ZA6E NUMONYX, M29W640GL70ZA6E Datasheet - Page 33

no-image

M29W640GL70ZA6E

Manufacturer Part Number
M29W640GL70ZA6E
Description
IC FLASH 64MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GL70ZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640GL70ZA6E
Manufacturer:
EPCOS
Quantity:
3 000
Part Number:
M29W640GL70ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M29W640GH, M29W640GL, M29W640GT, M29W640GB
Command interface
4.3.3
Block Protect and Chip Unprotect commands
Groups of blocks can be protected against accidental program or erase. The protection
groups are shown in
Appendix A: Block
addresses,
Table 29: Top boot block addresses,
and
M29W640GB. The whole chip
M29W640GT
Table 30: Bottom boot block addresses,
can be unprotected to allow the data inside the blocks to be changed.
Block protect and chip unprotect operations are described in
Appendix D: Block
protection.
33/90

Related parts for M29W640GL70ZA6E