M29W800DB45ZE6E NUMONYX, M29W800DB45ZE6E Datasheet - Page 19

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M29W800DB45ZE6E

Manufacturer Part Number
M29W800DB45ZE6E
Description
IC FLASH 8MBIT 45NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W800DB45ZE6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W800DB45ZE6E
Manufacturer:
MICRON
Quantity:
210
Part Number:
M29W800DB45ZE6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
4.7
4.8
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six bus write operations are
required to issue the Chip Erase command and start the program/erase controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the chip erase operation appears to start but will terminate within
about 100 μs, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands. It is not possible to issue
any command to abort the operation. Typical chip erase times are given in
Program/erase times and program/erase endurance
the chip erase operation will output the status register on the data inputs/outputs. See the
Section 5: Status register
After the chip erase operation has completed the memory will return to the read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
status register. A Read/Reset command must be issued to reset the error condition and
return to read mode.
The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six bus write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth bus write operation using the address of the additional
block. The block erase operation starts the program/erase controller about 50 μs after the
last bus write operation. Once the program/erase controller starts it is not possible to select
any more blocks. Each additional block must therefore be selected within 50 μs of the last
block. The 50 μs timer restarts when an additional block is selected. The status register can
be read after the sixth bus write operation. See the status register for details on how to
identify if the program/erase controller has started the block erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the block erase operation appears to
start but will terminate within about 100 μs, leaving the data unchanged. No error condition
is given when protected blocks are ignored.
During the block erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in
and program/erase endurance
operation will output the status register on the data inputs/outputs. See the
register
After the block erase operation has completed the memory will return to the read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
status register. A Read/Reset command must be issued to reset the error condition and
return to read mode.
The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.
for more details.
for more details.
cycles. All bus read operations during the block erase
cycles. All bus read operations during
Table 6: Program/erase times
Section 5: Status
Table 6:
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