M25P64-VMF6TP NUMONYX, M25P64-VMF6TP Datasheet - Page 43
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M25P64-VMF6TP
Manufacturer Part Number
M25P64-VMF6TP
Description
IC FLASH 64MBIT 50MHZ 16SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P64-VME6TG.pdf
(55 pages)
Specifications of M25P64-VMF6TP
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P64-VMF6TP
M25P64-VMF6TPTR
M25P64-VMF6TPTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P64-VMF6TP
Manufacturer:
Numonyx
Quantity:
1 000
Company:
Part Number:
M25P64-VMF6TP
Manufacturer:
MICRONEOL84
Quantity:
1 016
Part Number:
M25P64-VMF6TP
Manufacturer:
STM
Quantity:
20 000
Company:
Part Number:
M25P64-VMF6TP-6JBS
Manufacturer:
OKI
Quantity:
270
Company:
Part Number:
M25P64-VMF6TP-N
Manufacturer:
STMicroelectronics
Quantity:
500
Company:
Part Number:
M25P64-VMF6TPBA
Manufacturer:
MICRON
Quantity:
1 001
Table 16.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one
6. V
t
VPPHSL
t
t
t
t
Symbol
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CH
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
PP
CL
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤ n ≤ 256).
SHSL
CH
t
t
t
f
f
SE
BE
PPH
W
C
R
(1)
(5)
(1)
+ t
(2)
(2)
(2)
(2)
(2)
(4)
(4)
(6)
should be kept at a valid level until the program/erase operation is completed and result (success or failure) is known.
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
t
CLL
t
DIS
HO
f
DH
t
HZ
LZ
AC characteristics
C
V
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, RES, WREN, WRDI, RDID, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
Enhanced Program Supply Voltage High to Chip Select Low
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time (V
Sector Erase Cycle Time
Sector Erase Cycle Time (V
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
Test conditions specified in
(3)
(3)
(peak to peak)
(peak to peak)
Parameter
C
PP
(max)
PP
= V
PP
= V
PPH
= V
PPH
PPH
)
)
) (256 Bytes)
Table 10
and
Table 12
Min.
D.C.
D.C.
100
100
200
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
0.4+ n*1/256
Typ.
0.35
1.4
0.5
68
35
5
1
Max.
160
160
50
20
15
8
8
8
8
5
3
MHz
MHz
V/ns
V/ns
Unit
43/55
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s