M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 13

• Manufacturer Part Number: M25P64-VME6G
• Description: IC FLASH 64MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P64-VME6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (8M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Package: 8VDFPN EP
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 128
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
4.1
4.2
4.3
4.4
Operating features
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is
one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This
is followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see
and
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration t
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (t
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Fast Program/Erase mode
The Fast Program/Erase mode is used to speed up programming/erasing. The device
enters the Fast Program/Erase mode during the Page Program, Sector Erase, or Bulk
Erase
The use of the Fast Program/Erase mode requires specific operating conditions in addition
to the normal ones (V
1. Avoid applying VPPH to the W/VPP pin during Bulk Erase with process technology T9HX devices, identified by
process identification digit "4" in the device marking.
Table 16: AC
the voltage applied to the W/V
ambient temperature, T
the cumulated time during which W/V
(1)
instruction whenever a voltage equal to V
SE
or t
BE
characteristics).
).
CC
must be within the normal operating range):
A
must be 25°C ±10°C,
PP
pin must be equal to V
PP
is at V
PPH
PPH
PP
is applied to the W/V
should be less than 80 hours
).
PPH
(see
W
Page Program (PP)
, t
Table
PP
, t
PP
SE
10)
, or t
pin.
BE
). The
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