M24128-BWDW6T STMicroelectronics, M24128-BWDW6T Datasheet - Page 24
![IC EEPROM 128KBIT 400KHZ 8TSSOP](/photos/5/43/54342/497-8-tssop_sml.jpg)
M24128-BWDW6T
Manufacturer Part Number
M24128-BWDW6T
Description
IC EEPROM 128KBIT 400KHZ 8TSSOP
Manufacturer
STMicroelectronics
Datasheet
1.M24128-BRMN6TP.pdf
(39 pages)
Specifications of M24128-BWDW6T
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
128K (16K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24128-BWDW6T
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M24128-BWDW6TP
Manufacturer:
STMicroelectronics
Quantity:
205
Part Number:
M24128-BWDW6TP
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Table 13.
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a Read command (after the Stop condition) or after the completion of the
Table 14.
1. If the application uses the M24128-BR at 2.5 V < V
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read command (after the Stop condition) or after the completion of the
24/39
Symbol
Symbol
I
I
V
internal write cycle t
I
V
characteristics (M24xxx-W, device grade 6)
internal write cycle t
I
I
I
CC0
CC1
V
V
I
I
V
LO
CC
I
CC0
CC1
V
OL
I
LI
CC
LO
IH
IL
OL
LI
IH
IL
Input leakage current
(SCL, SDA, E2, E1, E0)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage (SDA, SCL, WC)
Input high voltage (SCL, SDA)
Input high voltage (WC, E0, E1, E2)
Output low voltage
Input leakage current (SCL, SDA,
E2, E1, E0)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage (SDA, SCL, WC)
Input high voltage (SCL, SDA)
Input high voltage (WC, E0, E1, E2)
Output low voltage
DC characteristics (M24xxx-W, device grade 3)
DC characteristics (M24xxx-R - device grade 6)
W
W
(t
(t
Parameter
W
W
Parameter
is triggered by the correct decoding of a Write command).
is triggered by the correct decoding of a Write command).
instead of the above table.
Doc ID 16892 Rev 19
Device not selected
CC
Test condition (in addition to
During t
Device not selected
2.5 V < V
(in addition to those in
applied on SDA: V
< 5.5 V and –40 °C < T
SDA Hi-Z, external voltage
During t
V
device in Standby mode
I
SDA in Hi-Z, external voltage
I
OL
applied on SDA: V
OL
CC
V
those in
or V
1.8 V V
2.5 V V
device in Standby mode
I
OL
CC
V
= 1 mA, V
= 2.1 mA, V
= 1.8 V, f
W
IN
V
, 2.5 V < V
= 3 mA, V
, 1.8 V < V
CC
Test condition
CC
W
= V
IN
, V
, 2.5 V < V
= V
< 5.5 V, f
SS
Table
CC
CC
CC
c
SS
CC
or V
= 400 kHz
= 1.8 V
< 2.5 V
< 5.5 V
(3)
CC
CC
or V
(2)
SS
CC
= 1.8 V
CC
, V
8)
CC
, V
M24128-BW, M24128-BR, M24128-BF
A
SS
= 2.5 V or
or V
c
CC
= 5.5 V
(1)
< 5.5 V
< 2.5 V
IN
CC
< +85 °C, please refer to
= 400 kHz
IN
or V
< 5.5 V
= V
Table
= V
CC
CC
SS
SS
7)
or
0.7V
0.7V
–0.45
–0.45
Min.
0.7V
0.7V
–0.45
Min.
CC
CC
CC
CC
0.25 V
Table 12: DC
V
0.3 V
V
0.3V
CC
Max.
CC
3
Max.
± 2
± 2
0.8
6.5
0.2
5
± 2
± 2
6.5
0.4
1
(2)
10
+0.6
2
(1)
+0.6
CC
CC
CC
Unit
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V