M25PE20-VMN6P NUMONYX, M25PE20-VMN6P Datasheet - Page 51
![IC FLASH 2MBIT 75MHZ 8SOIC](/photos/7/28/72839/m25pe20-vmn6p_sml.jpg)
M25PE20-VMN6P
Manufacturer Part Number
M25PE20-VMN6P
Description
IC FLASH 2MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25PE10-VMN6TP.pdf
(64 pages)
Specifications of M25PE20-VMN6P
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Package
8SOIC N
Cell Type
NOR
Density
2 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
256Byte x 1024
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M25PE20, M25PE10
Table 21.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
PW
CH
SLCH
CHSL
SHSL
DP
CL
THSL
SHTL
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
f
f
PE
SE
CH
C
R
(1)
(2)
(3)
(1)
(3)
(2)
(2)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
CLL
DIS
AC characteristics (25 MHz operation)
f
DH
HO
t
C
V
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
Clock frequency for read instructions
Clock High time
Clock Low time
Clock Slew rate
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
Top Sector Lock Setup time
Top Sector Lock Hold time
S to Deep Power-down
S High to Standby Power mode
Page Write cycle time (256 bytes)
Page Write cycle time (n bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Test conditions specified in
Parameter
(2)
(peak to peak)
C
.
Table 16
and
Min.
D.C.
D.C.
200
100
0.1
18
18
10
10
10
10
50
5
5
0
Table 17
n*0.8/256
n*0.8/256
DC and AC parameters
10.2 +
0.4 +
Typ.
1.2
11
10
1
Max.
25
20
15
15
30
25
20
3
5
5
MHz
MHz
Unit
V/ns
ms
ms
ms
51/64
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
s