M25P40-VMN3PB NUMONYX, M25P40-VMN3PB Datasheet - Page 43

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M25P40-VMN3PB

Manufacturer Part Number
M25P40-VMN3PB
Description
IC FLASH 4MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheets

Specifications of M25P40-VMN3PB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
SO-8
Cell Type
NOR
Density
4Mb
Access Time (max)
15ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 125C
Package Type
SO N
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 20.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
CL
SHSL
DP
CH
f
f
C
R
(1)
(1)
(2)
(2)
(2)
(2)
(2)
(2)
+ t
(2)
(2)
(4)
(4)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
AC characteristics (50 MHz operation, device grade 6, V
t
CSS
DSU
t
CSH
t
CLH
t
CLL
DIS
f
DH
HO
t
HZ
LZ
C
V
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, RDID, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup time
Write Protect Hold time
S High to Deep Power-down mode
S High to Standby Power mode without
Electronic Signature Read
S High to Standby Power mode with
Electronic Signature Read
Test conditions specified in
(3)
(3)
Parameter
(peak to peak)
(peak to peak)
C
Table 10
and
Table 18
Min.
100
100
DC
DC
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
Typ.
CC
min = 2.7 V)
Max.
50
25
30
30
8
8
8
8
3
MHz
MHz
V/ns
V/ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
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