M25P80-VMW6TG NUMONYX, M25P80-VMW6TG Datasheet - Page 43

• Manufacturer Part Number: M25P80-VMW6TG
• Description: IC FLASH 8MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P80-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SO W
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 16
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Access Time (max): 8ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P80-VMW6TG; M25P80-VMW6TGTR

Table 16.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
CL
SHSL
DP
CH
t
f
f
W
C
R
(1)
(1)
(2)
+ t
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(4)
(4)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
HO
f
DH
t
AC characteristics (25 MHz operation)
HZ
LZ
C
V
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock high time
Clock low time
Clock rise time
Clock fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock low to output valid
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output low-Z
HOLD to Output high-Z
Write Protect setup time
Write Protect hold time
S High to Deep Power-down mode
S High to Standby mode without Electronic
Signature Read
S High to Standby mode with Electronic
Signature Read
Write Status Register cycle time
Test conditions specified in
(3)
(3)
(peak to peak)
Parameter
(peak to peak)
C
Table 10
—
—
—
—
—
—
Min.
100
100
DC
DC
0.1
0.1
18
18
10
10
10
10
10
10
10
10
20
and
5
5
0
Table 12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.8
25
20
15
15
15
20
15
3
3
MHz
MHz
V/ns
V/ns
Unit
ms
43/57
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs