M25P20-VMP6TGB NUMONYX, M25P20-VMP6TGB Datasheet - Page 32

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M25P20-VMP6TGB

Manufacturer Part Number
M25P20-VMP6TGB
Description
IC FLASH 2MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P20-VMP6TGB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P20-VMP6TGBTR

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Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
1. The value of the 8-bit Electronic Signature, for the M25P20, is 11h.
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
32/55
S
C
D
Q
S
C
D
Q
0
Sequence and Data-Out Sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device,
but before the whole of the 8-bit Electronic Signature has been transmitted for the first time
(as shown in
device was not previously in the Deep Power-down mode, the transition to the Standby
Power mode is immediate. If the device was previously in the Deep Power-down mode,
though, the transition to the Standby Power mode is delayed by t
must remain High for at least t
Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
1
High Impedance
2
Instruction
3
4
High Impedance
0
Figure
5
1
6
2
Instruction
7
19), still ensures that the device is put into Standby Power mode. If the
3
MSB
23
8
4
22 21
9 10
3 Dummy Bytes
5
6
RES1
7
3
28 29 30 31 32 33 34 35
(max), as specified in
2
1
Deep Power-down Mode
0
MSB
7
Electronic Signature Out
Deep Power-down Mode
t
RES1
6
5
4
3
Table
36 37 38
2
Stand-by Mode
1
19. Once in the Standby
RES1
0
, and Chip Select (S)
t
RES2
Stand-by Mode
AI04078B
AI04047C

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