MT46V64M16P-6T IT:A TR Micron Technology Inc, MT46V64M16P-6T IT:A TR Datasheet - Page 48
MT46V64M16P-6T IT:A TR
Manufacturer Part Number
MT46V64M16P-6T IT:A TR
Description
IC DDR SDRAM 1GBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16P-6T IT:A TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 48 of 82
- Download datasheet (4Mb)
CAS Latency (CL)
Figure 22:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
CAS Latency
Note:
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first bit of output data. The latency can be set to 2, 2.5, or 3 (-5B
only) clocks, as shown in Figure 22. Reserved states should not be used, as unknown
operation or incompatibility with future versions may result.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available nominally coincident with clock edge n + m. Table 29 on page 49 indi-
cates the operating frequencies at which each CL setting can be used.
Command
Command
Command
BL = 4 in the cases shown; shown with nominal
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
READ
READ
READ
T0
T0
T0
CL = 2
CL = 2.5
CL = 3
NOP
NOP
NOP
T1
T1
T1
48
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
NOP
NOP
T2
T2
T2
t
T2n
T2n
AC,
1Gb: x4, x8, x16 DDR SDRAM
t
DQSCK, and
NOP
NOP
NOP
T3
T3
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
T3n
T3n
T3n
t
DQSQ.
Operations
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