MT46V64M16TG-6T:A Micron Technology Inc, MT46V64M16TG-6T:A Datasheet - Page 18
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MT46V64M16TG-6T:A
Manufacturer Part Number
MT46V64M16TG-6T:A
Description
IC DDR SDRAM 1GBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V64M16TG-6T:A
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V64M16TG-6T:A
Manufacturer:
MICRON/美光
Quantity:
20 000
Table 12:
Figure 9:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Parameter/Condition
Clock input mid-point voltage: CK and CK#
Clock input voltage level: CK and CK#
Clock input differential voltage: CK and CK#
Clock input differential voltage: CK and CK#
Clock input crossing point voltage: CK and CK#
–0.30V
2.80V
1.45V
1.25V
1.05V
CK#
CK
Clock Input Operating Conditions
Notes: 1–5, 16, 17, 31 apply to the entire table; Notes appear on page 26;
0°C ≤ T
SSTL_2 Clock Input
X X
Notes:
A
≤ +70°C; V
1.
2.
3. CK and CK# must cross in this region.
4.
5. CK and CK# must have a minimum 700mV peak-to-peak swing.
6. For AC operation, all DC clock requirements must also be satisfied.
7. Numbers in diagram reflect nominal values for all devices other than -5B.
CK or CK# may not be more positive than V
This provides a minimum of 1.15V to a maximum of 1.35V and is always half of V
CK and CK# must meet at least V
DD
Q = +2.5V ±0.2V, V
DD
Symbol
V
V
V
V
V
= +2.5V ±0.2V (V
MP
IN
ID
ID
IX
(
(
(
(
(
DC
DC
AC
AC
18
DC
X X
)
)
)
)
ID
)
(
DC
)
0.5 × V
MIN when static and is centered around V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
DD
Min
1.15
0.36
DD
–0.3
0.7
DD
Q + 0.3V or more negative than V
Q = +2.6V ±0.1V, V
Q - 0.2
1Gb: x4, x8, x16 DDR SDRAM
0.5 × V
V
V
V
DD
DD
DD
V
Maximum clock level
Minimum clock level 1
Max
MP
1.35
Q + 0.3
Q + 0.6
Q + 0.6
DD
(
DC
DD
©2003 Micron Technology, Inc. All rights reserved.
Q + 0.2
)
2 V
= +2.6V ±0.1V for -5B)
IX
(
AC
Units
)
3
SS
V
V
V
V
V
DD
MP
- 0.3V.
V
1
ID
Q.
(
DC
(
DC
)
Notes
) 4
.
V
7, 10
ID
7, 9
10
7
9
(
AC
) 5