SMB8J13C-E3/2C Vishay Semiconductors, SMB8J13C-E3/2C Datasheet - Page 4

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SMB8J13C-E3/2C

Manufacturer Part Number
SMB8J13C-E3/2C
Description
TVS Diodes - Transient Voltage Suppressors 800W 13V 10% Bidir
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SMB8J13C-E3/2C

Product Category
TVS Diodes - Transient Voltage Suppressors
Rohs
yes
Polarity
Bidirectional
Operating Voltage
13 V
Breakdown Voltage
14.4 V
Clamping Voltage
23.8 V
Peak Surge Current
100 A
Package / Case
DO-214AA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channels
1 Channel
Dimensions
3.94(Max) mm W x 4.57(Max) mm L
Peak Pulse Power Dissipation
800 W
Factory Pack Quantity
750
RATINGS AND CHARACTERISTICS CURVES (T
Revision: 12-Nov-12
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
150
100
50
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0
100
0.1
100
10
0
75
50
25
0.1 µs
1
0
0
Fig. 1 - Peak Pulse Power Rating Curve
0.2 x 0.2" (5.0 x 5.0 mm)
t
d
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Copper Pad Areas
t
25
r
= 10 µs
1.0 µs
Peak Value
I
PPM
1.0
Fig. 3 - Pulse Waveform
T
50
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
- Initial Temperature (°C)
t
t - Time (ms)
d
Half Value -
I
10 µs
PPM
- Pulse Width (s)
75
2.0
10/1000 µs Waveform
as defined by R.E.A.
100
T
Pulse Width (t
is defined as the Point
where the Peak Current
decays to 50 % of I
J
100 µs
= 25 °C
SMB8J5.0C -
SMB8J40CA
I
2
PP
125
3.0
SMB10J5.0 -
SMB10J40A
150
d
1.0 ms
)
PPM
175
4.0
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
10 ms
200
A
= 25 °C unless otherwise noted)
4
10 000
1000
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
100
100
200
100
1.0
10
10
10
0.01
1
1
Fig. 5 - Typical Transient Thermal Impedance
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Vishay General Semiconductor
Fig. 4 - Typical Junction Capacitance
V
WM
0.1
Bi-Directional
Number of Cycles at 60 Hz
- Reverse Stand-Off Voltage (V)
t
p
V
Stand-Off
Voltage V
- Pulse Duration (s)
R
, Measured at
1
8.3 ms Single Half Sine-Wave
Uni-Directional Only
DiodesEurope@vishay.com
10
10
WM
10
Document Number: 88422
T
f = 1.0 MHz
V
J
sig
= 25 °C
Measured at
Zero Bias
= 50 mVp-p
100
100
1000
200
100

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