MT46H16M32LFCG-6 IT:B Micron Technology Inc, MT46H16M32LFCG-6 IT:B Datasheet - Page 81

• Manufacturer Part Number: MT46H16M32LFCG-6 IT:B
• Description: IC DDR SDRAM 512MBIT 152VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H16M32LFCG-6 IT:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 152-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 43: WRITE-to-PRECHARGE – Interrupting
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
CK
1
5
6
5
6
5
6
WRITE
Bank a,
Col b
T0
Notes:
2
t
t
t
DQSS
DQSS
DQSS
1. An interrupted burst of 8 is shown; two data elements are written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4.
5. DQS is required at T4 and T4n to register DM.
6. D
D
IN
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
T1
D
IN
IN
b = data-in for column b.
D
D
IN
IN
T1n
D
IN
D
IN
NOP
T2
T2n
81
t
WR
NOP
T3
512Mb: x16, x32 Mobile LPDDR SDRAM
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3n
(a or all)
PRE
T4
Bank
3
Don’t Care
T4n
T5
NOP
© 2004 Micron Technology, Inc. All rights reserved.
WRITE Operation
Transitioning Data
T6
NOP