IS42S32800B-6BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32800B-6BL-TR Datasheet - Page 28

• Manufacturer Part Number: IS42S32800B-6BL-TR
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32800B-6BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800B
28
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Figure 5.Self Refresh Entry &Exit Cycle
BS0,1
A0-A9
DQM
RAS#
CAS#
WE#
CLK
CKE
CS#
Note:To Enter SelfRefresh Mode
1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle.
2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays “low”.
To Exit SelfRefresh Mode
1. System clock restart and be stable before returning CKE high.
2. Enable CKE and CKE should be set high for minimum time of tSRX.
3. CS#starts from high.
4. Minimum tRC is required after CKE going high to complete SelfRefresh exit.
5. 2048 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh.
DQ
Once the device enters SelfRefresh mode,minimum tRAS is required before exit from SelfRefresh.
T0
*Note 8
SelfRefresh Enter
*Note 1
T1
t
IS
Hi-Z
T2
*Note 2
T3
T4
T5
T6
*Note 3
T7
T8
T9
T10
Hi-Z
*Note 4
SelfRefresh Exit
T11
*Note 5
t
*Note 6
SRX
T12
t
RC(min) *Note 7
T13
T14
T15
Auto Refresh
*Note 8
Integrated Silicon Solution, Inc.
t
T16
PDE
T17
T18
T19
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07/21/09
Rev. F
®